Работы, цитирующие эту работу

Работ: 2

Работа: Coherent Growth of InP/InAsP/InP Nanowires on a Si (111) Surface by Molecular-Beam Epitaxy

1. Energy Levels of Nanodots Inside Semiconductor Nanowires

   A. B. Davlatov, G. Gulyamov, Doston Urinboev

   СтатьяAdvancements in Semiconductor Devices and Circuit DesignBrazilian Journal of Physics2024Цитирований: 1

   ABIABI:AkademIndex/openalex/2026.other.331838

2. Lattice mismatch, pressure and temperature effects on linear and nonlinear optical properties of InAs nanodots embedded in InAsP nanowires

   A. B. Davlatov, Kawtar Feddi, Bakhrom Abdulazizov +2

   СтатьяSemiconductor Quantum Structures and DevicesJournal of Luminescence2025Цитирований: 0

   ABIABI:AkademIndex/openalex/2025.article.001270