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Работ: 2
Работа: Defects in Irradiated Silicon. II. Infrared Absorption of the Si-<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi>A</mml:mi></mml:math>Center
Positron probing of open vacancy volume of phosphorus‐vacancy complexes in float‐zone n‐type silicon irradiated by 0.9‐MeV electrons and by 15‐MeV protons
N.Yu. Arutyunov, V. V. Emtsev, Mohamed Elsayed +4
СтатьяMuon and positron interactions and applicationsPhysica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics2017Цитирований: 1ABI