Structure determination of the Si(111):B(√3×√3)<i>R</i>30° surface: Subsurface substitutional doping

Synchrotron x-ray diffraction has been used to analyze the (\ensuremath{\surd}3\ifmmode\times\else\texttimes\fi{}\ensuremath{\surd}3)R30\ifmmode^\circ\else\textdegree\fi{} reconstruction of B/Si(111). Excellent agreement is obtained with in-plane data for a model in which boron sits in every third site of threefold symmetry. Out-of-plane diffraction, however, is only consistent with boron below the surface in the fivefold-coordinated substitutional site under a silicon ${\mathrm{T}}_{4}$ adatom. The structure is confirmed by the growth behavior under room-temperature Si deposition in which the silicon adatom is displaced from its ordered site leaving boron in a two-dimensional ordered substitutional array.

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