Работы, цитирующие эту работу

Работ: 2

Работа: Structure determination of the Si(111):B(√3×√3)<i>R</i>30° surface: Subsurface substitutional doping

1. Formation of nanosize silicides films on the Si(111) and Si(100) surfaces by low-energy ion implantation

   А.С. Рысбаев, Zh. B. Khuzhaniyazov, A.M. Rakhimov +1

   СтатьяSemiconductor materials and interfacesTechnical Physics2014Цитирований: 15

   ABIABI:AkademIndex/openalex/2026.other.213638

2. Peculiarities of the electron structure of nanosized ion-implanted layers in silicon

   А.С. Рысбаев, Zh. B. Khuzhaniyazov, M.T. Normuradov +2

   СтатьяSemiconductor materials and interfacesTechnical Physics2014Цитирований: 9

   ABIABI:AkademIndex/openalex/2026.other.095294