Работы, цитирующие эту работу

Работ: 3

Работа: Effect of thermal processing on the structure and optical properties of crystalline silicon with GaSb nanocrystals formed with the aid of high-doze ion implantation

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2. The dependence of the parameters of energy bands on the depth of the ion-doped layer for Si implanted with ions Ba+

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3. Using of ion implantation for obtaining nanostructures with the wide band GaP based on GaP

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