Работы, цитирующие эту работу

Работ: 3

Работа: Mechanisms of growth and defect properties of epitaxial SiC

1. Comparison of electron irradiation on the formation of surface defects in situ and post thin-film LiF/Si(111) deposition

   U. B. Sharopov, Kulwinder Kaur, М. К. Курбанов +4

   СтатьяSemiconductor materials and devicesThin Solid Films2021Цитирований: 13

   ABIABI:AkademIndex/openalex/2026.other.144461

2. Formation of defects on the surface of LiF crystals under irradiation with different ions mass

   Utkirjon Sharopov, Umid Gopparov, K. Yu. Rashidov +8

   СтатьяIon-surface interactions and analysisRadiation effects and defects in solids2022Цитирований: 9

   ABIABI:AkademIndex/openalex/2026.other.144479

3. Influence of the irradiation of ions of different mass on the formation of surface defects of lithium fluoride thin films

   Utkirjon Sharopov, Kulwinder Kaur, М. К. Курбанов +5

   СтатьяIon-surface interactions and analysisSurface and Interface Analysis2022Цитирований: 6

   ABIABI:AkademIndex/openalex/2026.other.144470