Nanoscale III–V on Si-based junctionless tunnel transistor for EHF band applications

A single gate Ⅲ-Ⅴ junctionless tunnel field effect transistor (SG-JLTFET) has been reported which shows excellent dc characteristics at low power supply operation. This device has a thin uniformly n-type doped channel of GaSb i.e. gallium antimonide which is grown epitaxially over silicon substrate. The DC performance parameters such as I ON , I ON / I OFF , average and point subthreshold slope as well as device parameters for analog applications viz. transconductance g m , transconductance generation efficiency g m / I D , various capacitances and the unity gain frequency f T are studied using a device simulator. Along with examining its endurance to short channel effects, the performances are also compared with a Silicon Dual Gate Junctionless Tunnel FET (DG-JLTFET). The DC and small signal analog performance reflects that GaSb SG-JLTFET has immense purview for extreme high-frequency and low-power applications.

Перевод пока недоступен