Работы, цитирующие эту работу

Работ: 3

Работа: Nanoscale III–V on Si-based junctionless tunnel transistor for EHF band applications

1. A Surface Study of Si Doped Simultaneously with Ga and Sb

   X.M. Iliyev, Sobir B. Isamov, B. O. Isakov +2

   СтатьяSemiconductor Quantum Structures and DevicesEast European Journal of Physics2023Цитирований: 7

   ABIABI:AkademIndex/openalex/2023.article.001190

2. Effect of GaSb Compound on Silicon Bandgap Energy

   Х. М. Илиев, Н. Ф. Зикриллаев, K. S. Ayupov +4

   СтатьяSemiconductor materials and interfacesJournal of Nano- and Electronic Physics2024Цитирований: 1

   ABIABI:AkademIndex/openalex/2024.article.002963

3. Electrodifusion of Manganese Atoms in Silicon

   Xalmurat M. Iliyev, Zafar B. Khudoynazarov, B. O. Isakov +2

   СтатьяAdvancements in Semiconductor Devices and Circuit DesignEast European Journal of Physics2024Цитирований: 1

   ABIABI:AkademIndex/openalex/2024.article.003062