Статья

Effect of GaSb Compound on Silicon Bandgap Energy

Х. М. ИлиевTashkent State Technical University, 100095 Tashkent, UzbekistanН. Ф. ЗикриллаевTashkent State Technical University, 100095 Tashkent, UzbekistanK. S. AyupovTashkent State Technical University, 100095 Tashkent, UzbekistanB. O. IsakovTashkent State Technical University, 100095 Tashkent, UzbekistanБ. А. АбдурахмановTashkent State Technical University, 100095 Tashkent, UzbekistanZ. N. UmarkhodjaevaTashkent State Technical University, 100095 Tashkent, UzbekistanL. I. IsamiddinovaTashkent State Technical University, 100095 Tashkent, Uzbekistan

Journal of Nano- and Electronic Physicsjournal2024en

ABI

Аннотация

Journal of Nano- and Electronic Physics. Scientific journal. ISSN: 2077-6772. Journal abbreviation: J. Nano- Electron. Phys. No page charges. All articles are freely available on-line. Issued 4 times per year. Publisher: Sumy State University. (Sumy, Ukraine)

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Темы

Semiconductor materials and interfaces Semiconductor Quantum Structures and Devices Silicon and Solar Cell Technologies

Идентификаторы

DOI: 10.21272/jnep.16(2).02004

Цитирования и источники

Цитирований: 1 Использованных источников: 25

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