Influence of proton irradiation on recombination current in 6H–SiC pn structures
Anatoly M. Strel’chukGroupe d'Etude des Semiconducteurs, Centre National de la Recherche Scientifique, CC 074, Universite de Montpellier II, Place Eugene Bataillon, 34095 Montpellier Cedex 5, FranceV. V. KozlovskiSt. Petersburg State Technical University, Polytekhnicheskaya 29, St. Petersburg 194251, RussiaN.S. SavkinaSolid State Electronics Division, Ioffe Physical-Technical Institute of the Russian Academy of Sciences, 194021 St. Petersburg, RussiaM. G. RastegaevaSolid State Electronics Division, Ioffe Physical-Technical Institute of the Russian Academy of Sciences, 194021 St. Petersburg, RussiaA. N. AndreevSolid State Electronics Division, Ioffe Physical-Technical Institute of the Russian Academy of Sciences, 194021 St. Petersburg, Russia
1999en
ABI
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