Kinetic model of growth of GaAs nanowires
M. N. LubovAcademic University of Physics and Technology, Russian Academy of Sciences, St. Petersburg, 194021, RussiaD. V. KulikovIoffe Physico-Technical Institute, Russian Academy of Sciences, ul. Politekhnicheskaya 26, St. Petersburg, 194021, RussiaYu. V. TrushinAcademic University of Physics and Technology, Russian Academy of Sciences, St. Petersburg, 194021, Russia
2010en
ABI
Аннотация
A kinetic model of growth and formation of the crystal structure of gallium arsenide nanowires by molecular beam epitaxy on surfaces activated by Au drops is developed. The thicknesses of alternating layers of cubic and hexagonal phases formed due to fluctuations of the solution composition in the drop are calculated and compared with experimental data.
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