Component Technologies for Ultra-High-Voltage 4H-SiC pin Diode
Koji NakayamaKansai Electric Power Co., IncRyosuke IshiiKansai Electric Power Co., IncKatsunori AsanoKansai Electric Power Co., IncTetsuya MiyazawaCentral Research Institute of Electric Power Industry (CRIEPI)Masahiko ItoCentral Research Institute of Electric Power Industry (CRIEPI)Hidekazu TsuchidaCentral Research Institute of Electric Power Industry (CRIEPI)
2011en
ABI
Аннотация
Forward voltage drops of carbon implanted and thermal oxidized pin diode with thick drift layer are investigated to evaluate the effect on the lifetime. The forward voltage drops of the carbon implanted and thermal oxidized pin diodes with drift layer of 120 μm thick were around 4.0 V. Furthermore, blocking characteristics of 4H-SiC pin diodes with mesa-JTE, which were fabricated on C-face and Si-face substrates, are also investigated. The breakdown voltages of pin diodes with 250 μm and 100 μm epitaxial layers are 17.1 kV and 10.9 kV, respectively.
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