Работы, цитирующие эту работу

Работ: 2

Работа: Electrical properties of Al/p-Si diode with AlN interface layer under temperature and illumination stimuli for sensing applications

1. Technology of production and photoelectric characteristics of AlB₁₀ heterojunctions based on silicon

   Numonjon Sultanov, Zokirjon Mirzajonov, Fakhriddin T. Yusupov

   СтатьяSemiconductor materials and interfacesE3S Web of Conferences2023Цитирований: 6

   ABIABI:AkademIndex/openalex/2026.other.378265

2. RETRACTED: Advancements in Zinc Oxide (ZnO) thin films for photonic and optoelectronic applications: A focus on doping and annealing processes

   Zokirjon Mirzajonov, Khusanboy Manopovich Sulaymonov, Tokhir Rakhmonov +3

   СтатьяZnO doping and propertiesE3S Web of Conferences2024Цитирований: 5

   ABIABI:AkademIndex/openalex/2024.article.001516