Numerical study on the self-heating effects for vacuum/high-k gate dielectric tri-gate FinFETs
Guohe ZhangSchool of Electronic and Information Engineering, Xi'an Jiaotong University, Xi'an, Shaanxi 710049, ChinaJunhua LaiSchool of Electronic and Information Engineering, Xi'an Jiaotong University, Xi'an, Shaanxi 710049, ChinaShengli ZhuSchool of Electronic and Information Engineering, Xi'an Jiaotong University, Xi'an, Shaanxi 710049, ChinaSufen WeiSchool of Electronic and Information Engineering, Xi'an Jiaotong University, Xi'an, Shaanxi 710049, ChinaFeng LiangSchool of Electronic and Information Engineering, Xi'an Jiaotong University, Xi'an, Shaanxi 710049, ChinaCheng‐Fu YangDepartment of Chemical and Materials Engineering, National University of Kaohsiung, No. 700, Kaohsiung University Rd., Nan-Tzu District, Kaohsiung 811, Taiwan
2019en
ABI
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