Работы, цитирующие эту работу

Работ: 2

Работа: Numerical study on the self-heating effects for vacuum/high-k gate dielectric tri-gate FinFETs

1. The Self-Heating Effect in Junctionless Fin Field-Effect Transistors Based on Silicon-on-Insulator Structures with Different Channel Shapes

   A. É. Atamuratov, B. O. Jabbarova, M. M. Khalilloev +1

   СтатьяAdvancements in Semiconductor Devices and Circuit DesignTechnical Physics Letters2021Цитирований: 5

   ABIABI:AkademIndex/openalex/2021.article.000827

2. Impact of the channel shape, back oxide and gate oxide layers on self-heating in nanoscale JL FINFET

   A.E. Atamuratov, B.O. Jabbarova, M. M. Khalilloev +3

   СтатьяSemiconductor materials and devicesNanosystems Physics Chemistry Mathematics2022Цитирований: 2

   ABIABI:AkademIndex/openalex/2026.other.511885