Работы, цитирующие эту работу

Работ: 3

Работа: Ion Drift in an <i>n-p</i> Junction

1. Physical Processes during the Formation of Silicon-Lithium p-i-n Structures Using Double-Sided Diffusion and Drift Methods

   Ahmet Saymbetov, Р. А. Муминов, Nursultan Japashov +6

   СтатьяSilicon and Solar Cell TechnologiesMaterials2021Цитирований: 2

   ABIABI:AkademIndex/openalex/2021.article.000854

2. Optimal regime of the double-sided drift of lithium ions into silicon monocrystal

   Ahmet Saymbetov, Р. А. Муминов, Nursultan Japashov +4

   СтатьяGraphite, nuclear technology, radiation studiesPhysical Sciences and Technology2023Цитирований: 1

   ABIABI:AkademIndex/openalex/2026.other.517102

3. Equivalent circuit of a silicon–lithium p–i–n nuclear radiation detector

   Ahmet Saymbetov, Р. А. Муминов, Jing Zhang +8

   СтатьяAdvanced Energy Technologies and Civil Engineering InnovationsScientific Reports2023Цитирований: 0

   ABIABI:AkademIndex/openalex/2023.article.009538