Статья

431 kA/cm2 peak tunneling current density in GaN/AlN resonant tunneling diodes

Tyler A. GrowdenDepartment of Electrical and Computer Engineering, The Ohio State University 1 , Columbus, Ohio 43210, USAWeidong ZhangDepartments of Physics and Electrical Engineering Wright State University 2 , Dayton, Ohio 45435, USAE. R. BrownDepartments of Physics and Electrical Engineering Wright State University 2 , Dayton, Ohio 45435, USADavid F. StormU.S. Naval Research Laboratory 3 , Washington, DC 20375, USAKaturah HansenDepartments of Physics and Electrical Engineering Wright State University 2 , Dayton, Ohio 45435, USAParastou FakhimiDepartment of Electrical and Computer Engineering, The Ohio State University 1 , Columbus, Ohio 43210, USADavid J. MeyerU.S. Naval Research Laboratory 3 , Washington, DC 20375, USAPaul R. BergerDepartment of Electrical and Computer Engineering, The Ohio State University 1 , Columbus, Ohio 43210, USA

2018en

ABI

Аннотация

We report on the design and fabrication of high current density GaN/AlN double barrier resonant tunneling diodes grown via plasma assisted molecular-beam epitaxy on bulk GaN substrates. A quantum-transport solver was used to model and optimize designs with high levels of doping and ultra-thin AlN barriers. The devices displayed repeatable room temperature negative differential resistance with peak-to-valley current ratios ranging from 1.20 to 1.60. A maximum peak tunneling current density (Jp) of 431 kA/cm2 was observed. Cross-gap near-UV (370–385 nm) electroluminescence (EL) was observed above +6 V when holes, generated from a polarization induced Zener tunneling effect, recombine with electrons in the emitter region. Analysis of temperature dependent measurements, thermal resistance, and the measured EL spectra revealed the presence of severe self-heating effects.

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Идентификаторы

DOI: 10.1063/1.5010794

Цитирования и источники

Цитирований: 3Использованных источников: 0

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