Работы, цитирующие эту работу

Работ: 3

Работа: 431 kA/cm2 peak tunneling current density in GaN/AlN resonant tunneling diodes

1. Calculation of the Total Current Generated in a Tunnel Diode Under the Action of Microwave and Magnetic Fields

   G. Gulyamov, Sharifa B. Utamuradova, Mukhamadjon G. Dadamirzaev +5

   СтатьяSemiconductor Quantum Structures and DevicesEast European Journal of Physics2023Цитирований: 5

   ABIABI:AkademIndex/openalex/2026.other.410284

2. Influence of Microwave and Magnetic Fields on the Electrophysical Parameters of a Tunnel Diode

   Paul R. Berger, G. Gulyamov, М. Г. Дадамирзаев +2

   СтатьяAdvancements in Semiconductor Devices and Circuit DesignRomanian Journal of Physics2024Цитирований: 4

   ABIABI:AkademIndex/openalex/2024.article.001662

3. The effect of a heated electron on the VAX of a tunnel diode

   G. Gulyamov, M. G. Dadamirzayev, K. M. Uktamova +1

   СтатьяGaN-based semiconductor devices and materialsAIP conference proceedings2023Цитирований: 2

   ABIABI:AkademIndex/openalex/2026.other.385121