Calculation of the Total Current Generated in a Tunnel Diode Under the Action of Microwave and Magnetic Fields
G. GulyamovNamangan Engineering Construction Institute, Namangan, UzbekistanSharifa B. UtamuradovaInstitute of Semiconductor Physics and Microelectronics at the National University of Uzbekistan, Tashkent, UzbekistanMukhamadjon G. DadamirzaevNamangan Engineering Construction Institute, Namangan, UzbekistanN. A. TurgunovInstitute of Semiconductor Physics and Microelectronics at the National University of Uzbekistan, Tashkent, UzbekistanMunira K. UktamovaInstitute of Semiconductor Physics and Microelectronics at the National University of Uzbekistan, Tashkent, UzbekistanKakhramon FayzullaevInstitute of Semiconductor Physics and Microelectronics at the National University of Uzbekistan, Tashkent, UzbekistanArofat I. KhudayberdiyevaTashkent Institute of Chemical Technology, Tashkent, UzbekistanAlisher I. TursunovTermiz State University, Termiz, Uzbekistan
ABI
Аннотация
In this paper, a formula was derived for calculating the total current generated in a tunnel diode under the action of a microwave field and a magnetic field. In addition, the dependence of the total current of the tunnel diode on the total power induced by the microwave field is theoretically presented and compared with experimental data. For the total current in the tunnel diode, without taking into account the excess current, volt-ampere characteristics was obtained for cases with and without the influence of a microwave field.
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