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Работы, на которые ссылается эта работа

Работ: 17

Работа: Calculation of the Total Current Generated in a Tunnel Diode Under the Action of Microwave and Magnetic Fields

  1. Physics of Semiconductor Devices

    Simon M. Sze, Kwok K. Ng

    Книга2006Цитирований: 33
    ABI

  2. Effect of temperature on the thermodynamic density of states in a quantizing magnetic field

    G. Gulyamov, У. И. Эркабоев, N. Yu. Sharibaev

    СтатьяQuantum and electron transport phenomenaSemiconductors2014Цитирований: 16
    ABI

  3. Defect-formation processes in silicon doped with manganese and germanium

    K. P. Abdurakhmanov, Sharifa B. Utamuradova, Kh.S. Daliev +2

    Статья1998Цитирований: 10
    ABI

  4. Characteristics of X-ray and gamma radiation detectors based on polycrystalline CdTe and CdZnTe films

    Sharifa B. Utamuradova, S. A. Muzafarova, A. M. Abdugafurov +3

    СтатьяAdvanced Semiconductor Detectors and MaterialsApplied Physics2021Цитирований: 8
    ABI

  5. Decay of Impurity Clusters of Nickel and Cobalt Atoms in Silicon under the Influence of Pressure

    N. A. Turgunov, Elmurod Kh. Berkinov, D. Kh. Mamajonova

    СтатьяSilicon and Solar Cell TechnologiesJournal of Nano- and Electronic Physics2021Цитирований: 8
    ABI

  6. Influence of deformation and light on the diffusion capacity and differential resistance of the p-n junction of a strong electromagnetic field

    G. Gulyamov, M. G. Dadamirzayev, M. O. Qosimova +1

    СтатьяSilicon and Solar Cell TechnologiesAIP conference proceedings2023Цитирований: 5
    ABI

  7. Theory of Tunneling

    E. O. Kane

    Статья1961Цитирований: 4
    ABI

  8. Formation of Cobalt Impurity Microinclusions in Silicon Single Crystals

    N. A. Turgunov

    СтатьяSilicon and Solar Cell TechnologiesInorganic Materials2018Цитирований: 3
    ABI

  9. The multivalued current–voltage characteristics in the tunnel diodes

    К. М. Алиев, И. К. Камилов, Kh. O. Ibragimov +1

    Статья2008Цитирований: 3
    ABI

  10. Excess Tunnel Current in Silicon Esaki Junctions

    A. G. Chynoweth, W. L. Feldmann, R. A. Logan

    Статья1961Цитирований: 3
    ABI

  11. 431 kA/cm2 peak tunneling current density in GaN/AlN resonant tunneling diodes

    Tyler A. Growden, Weidong Zhang, E. R. Brown +5

    Статья2018Цитирований: 3
    ABI

  12. Tunnel junction <i>I</i>(<i>V</i>) characteristics: Review and a new model for p-n homojunctions

    Nelly Moulin, Mohamed Amara, Fabien Mandorlo +1

    Обзорная статья2019Цитирований: 3
    ABI

  13. Changes in diodes with a p-n-transition under the influence of microwave radiation

    G. Gulyamov, Gulnoza Majidova, Feruza Muxitdinova +1

    СтатьяSemiconductor Quantum Structures and DevicesAIP conference proceedings2023Цитирований: 3
    ABI

  14. Negative Differential Resistance Devices and Circuits

    Paul R. Berger, A. Ramesh

    Глава2011Цитирований: 2
    ABI

  15. Simple Method for Calculating the Tunneling Current of an Esaki Diode

    J. Karlovský

    Статья1962Цитирований: 2
    ABI

  16. Franz-Keldysh effect in semiconductor built-in fields: Doping concentration and space charge region characterization

    Yury Turkulets, Ilan Shalish

    Статья2018Цитирований: 2
    ABI

  17. Без названия

    ДругоеЦитирований: 1
    ABI