Interaction of multiply charged manganese nanoclusters with selenium and tellurium atoms in silicon
М. К. БахадырхановTashkent State Technical University, Universitetskaya ul. 2, Tashkent, 100095, UzbekistanZ.M. SaparniyazovaBerdakh State University, ul Akademika Abdirova 1, Nukus, 742000, Karakalpakstan, UzbekistanХ. М. ИлиевTashkent State Technical University, Universitetskaya ul. 2, Tashkent, 100095, UzbekistanК. А. ИсмайловBerdakh State University, ul Akademika Abdirova 1, Nukus, 742000, Karakalpakstan, Uzbekistan
ABI
Аннотация
We have studied interaction of multiply charged manganese nanoclusters with Se and Te impurity atoms in silicon after simultaneous and sequential codoping. The results demonstrate that, after diffusion doping, certain thermal annealing conditions lead to strong interaction of Mn with Se and Te impurities. We have determined the optimal temperature of such interaction, proposed an interaction mechanism, and demonstrated the possibility of the formation of multicomponent nanoclusters of the form Si2Mn2−Se2+ and Si2Mn2−Te2+ in the silicon lattice without considerable distortion of chemical bonds in the silicon lattice.
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