Production and Characteristics of (ZnSe)0.1(SnSe)0.9 Films for Use in Thin Film Solar Cells
T.M. RazykovPhysical-Technical Institute, Academy of Sciences of the Republic of Uzbekistan, Tashkent, 100084, UzbekistanB. A. ErgashevPhysical-Technical Institute, Academy of Sciences of the Republic of Uzbekistan, Tashkent, 100084, UzbekistanR. T. YuldoshovPhysical-Technical Institute, Academy of Sciences of the Republic of Uzbekistan, Tashkent, 100084, UzbekistanAbdurashid MavlonovPhysical-Technical Institute, Academy of Sciences of the Republic of Uzbekistan, Tashkent, 100084, UzbekistanК. M. KuchkarovPhysical-Technical Institute, Academy of Sciences of the Republic of Uzbekistan, Tashkent, 100084, Uzbekistan
ABI
Аннотация
(ZnSe)x(SnSe)1–x films have been produced using chemical molecular beam deposition (CMBD) from an ZnSe and SnSe compound with a stoichiometric composition at a substrate temperature of 500°С. The structural, morphological, and electrophysical properties of (ZnSe)0.1 (SnSe)0.9 films are studied. The size of film grains is 5–6 μm. The results of X-ray diffraction analysis of specimens have revealed that the films have a crystalline (orthorhombic) structure. The structural parameters of the produced films are presented. The electrical conductivity of the films measured using the Van der Pauw method varies within 15–0.6 Ω cm–1.
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