Статья

Stacked nanosheet gate-all-around transistor to enable scaling beyond FinFET

N. LoubetIBM Research, IBM, Albany, NYTerence B. HookIBM Research, IBM, Albany, NYP. MontaniniIBM Research, IBM, Albany, NYChun Wing YeungIBM Research, IBM, Albany, NYS. KanakasabapathyIBM Research, IBM, Albany, NYM. GuillomIBM Research, IBM, Albany, NYT. YamashitaIBM Research, IBM, Albany, NYJ. ZhangIBM Research, IBM, Albany, NYXiren MiaoIBM Research, IBM, Albany, NYJ. WangIBM Research, IBM, Albany, NYAnthony YoungIBM Research, IBM, Albany, NYR. ChaoIBM Research, IBM, Albany, NYMingu KangIBM Research, Samsung Electronics, Albany, NYZhe LiuIBM Research, IBM, Albany, NYS. FanIBM Research, IBM, Albany, NYBassem HamiehIBM Research, IBM, Albany, NYStuart SiegIBM Research, IBM, Albany, NYYann MignotIBM Research, IBM, Albany, NYWenyu XuIBM Research, IBM, Albany, NYSoon‐Cheon SeoIBM Research, IBM, Albany, NYJ. YooIBM Research, Samsung Electronics, Albany, NYShinichi MochizukiIBM Research, IBM, Albany, NYM. SankarapandianIBM Research, IBM, Albany, NYOh-Hoon KwonIBM Research, Samsung Electronics, Albany, NYAdra CarrIBM Research, IBM, Albany, NYAndrew GreeneIBM Research, IBM, Albany, NYY. ParkIBM Research, Samsung Electronics, Albany, NYJulien FrougierIBM Research, GLOBALFOUNDRIES, Albany, NYRohit GalatageIBM Research, GLOBALFOUNDRIES, Albany, NYR. BaoIBM Research, IBM, Albany, NYJeffrey C. ShearerIBM Research, IBM, Albany, NYRena M. ContiIBM Research, IBM, Albany, NYHyo‐Jong SongIBM Research, Samsung Electronics, Albany, NYDae‐Young LeeIBM Research, Samsung Electronics, Albany, NYDexin KongIBM Research, IBM, Albany, NYYang XuIBM Research, IBM, Albany, NYAbraham ArceoIBM Research, IBM, Albany, NYZhichun BiIBM Research, IBM, Albany, NYP. XuIBM Research, IBM, Albany, NYRaja MuthintiIBM Research, IBM, Albany, NYJ. LiIBM Research, IBM, Albany, NYRobert WongIBM Research, IBM, Albany, NYD.E. BrownIBM Research, GLOBALFOUNDRIES, Albany, NYPhil OldigesIBM Research, IBM, Albany, NYRobert R. RobisonIBM Research, IBM, Albany, NYJohn ArnoldIBM Research, IBM, Albany, NYNelson FelixIBM Research, IBM, Albany, NYSpyridon SkordasIBM Research, IBM, Albany, NYJohn G. GaudielloIBM Research, IBM, Albany, NYT. StandaertIBM Research, IBM, Albany, NYH. JagannathanIBM Research, IBM, Albany, NYDan CorlissIBM Research, IBM, Albany, NYM.-H. NaIBM Research, IBM, Albany, NYAndreas KnorrIBM Research, GLOBALFOUNDRIES, Albany, NYTian‐Li WuIBM Research, IBM, Albany, NYDivya GuptaIBM Research, IBM, Albany, NYS. LianIBM Research, Samsung Electronics, Albany, NYR. DivakaruniIBM Research, IBM, Albany, NYT. R. GowIBM Research, IBM, Albany, NYCatherine B. LabelleIBM Research, GLOBALFOUNDRIES, Albany, NYS. LeeIBM Research, Samsung Electronics, Albany, NYVamsi ParuchuriIBM Research, IBM, Albany, NYH. BuIBM Research, IBM, Albany, NYMukesh KhareIBM Research, IBM, Albany, NY

2017en

ABI

Аннотация

In this paper, for the first time we demonstrate that horizontally stacked gate-all-around (GAA) Nanosheet structure is a good candidate for the replacement of FinFET at the 5nm technology node and beyond. It offers increased W <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">eff</inf> per active footprint and better performance compared to FinFET, and with a less complex patterning strategy, leveraging EUV lithography. Good electrostatics are reported at L <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">g</inf> =12nm and aggressive 44/48nm CPP (Contacted Poly Pitch) ground rules. We demonstrate work function metal (WFM) replacement and multiple threshold voltages, compatible with aggressive sheet to sheet spacing for wide stacked sheets. Stiction of sheets in long-channel devices is eliminated. Dielectric isolation is shown on standard bulk substrate for sub-sheet leakage control. Wrap-around contact (WAC) is evaluated for extrinsic resistance reduction.

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Идентификаторы

DOI: 10.23919/vlsit.2017.7998183

Цитирования и источники

Цитирований: 3Использованных источников: 0

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