Работы, цитирующие эту работу

Работ: 3

Работа: Stacked nanosheet gate-all-around transistor to enable scaling beyond FinFET

1. A Comprehensive Study of the Impact of the Gate Oxide Material Composition on the Self-Heating Effect in Nanosheet Field Effect Transistor

   A. É. Atamuratov, D. R. Rajapov, M. M. Khalilloev +3

   СтатьяAdvancements in Semiconductor Devices and Circuit DesignSilicon2025Цитирований: 1

   ABIABI:AkademIndex/openalex/2025.article.001842

2. Self-heating-induced junctionless stacked nanosheet FET RF stability performance degradation analysis and optimization

   M. Balasubbareddy, K. Sivasankaran, A. É. Atamuratov +1

   СтатьяSemiconductor materials and devicesJournal of Computational Electronics2025Цитирований: 0

   ABIABI:AkademIndex/openalex/2025.article.007736

3. Impact of the gate oxide material composition on the self-heating and short channel effects in nanosheet field effect transistor

   A.E. Atamuratov, D. R. Rajapov, M. M. Khalilloev +2

   ПрепринтAdvancements in Semiconductor Devices and Circuit DesignResearch Square2026Цитирований: 0

   ABIABI:AkademIndex/openalex/2026.preprint.001199