The impact of deposition and annealing temperature on the growth properties and surface passivation of silicon dioxide films obtained by atomic layer deposition
Jiahui XuSchool of Materials Science and Engineering, East China University of Science and Technology, Shanghai, 200237, ChinaShizheng LiSchool of Materials Science and Engineering, East China University of Science and Technology, Shanghai, 200237, ChinaWenjing ZhangSchool of Materials Science and Engineering, East China University of Science and Technology, Shanghai, 200237, ChinaShang YanSchool of Materials Science and Engineering, East China University of Science and Technology, Shanghai, 200237, ChinaCui LiuSchool of Materials Science and Engineering, East China University of Science and Technology, Shanghai, 200237, ChinaXiao YuanSchool of Materials Science and Engineering, East China University of Science and Technology, Shanghai, 200237, ChinaXiaojun YeSchool of Materials Science and Engineering, East China University of Science and Technology, Shanghai, 200237, ChinaHongbo LiSchool of Materials Science and Engineering, East China University of Science and Technology, Shanghai, 200237, China
2021en
ABI
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