Работы, цитирующие эту работу

Работ: 3

Работа: Far-infrared spectroscopy in strained AlSb/InAs/AlSb quantum wells

1. Concentration Dependences of the Electron Effective Mass, Fermi Energy, and Filling of Subbands in Doped InAs/AlSb Quantum Wells

   P. J. Baymatov, B. T. Abdulazizov

   СтатьяSemiconductor Quantum Structures and DevicesUkrainian Journal of Physics2017Цитирований: 10

   ABIABI:AkademIndex/openalex/2026.other.110160

2. Effects of Band Nonparabolicity and Band Offset on the Electron Gas Properties in <i>InAs/AlSb</i> Quantum Well

   G. Gulyamov, Bahrom Toshmirza O’g’li Abdulazizov, Baymatov Paziljon Jamoldinovich

   СтатьяSemiconductor Quantum Structures and DevicesJournal of Modern Physics2016Цитирований: 0

   ABIABI:AkademIndex/openalex/2016.article.000695

3. The Density of States of the Two Dimensional Electron Gas in InAs/AlSb Quantum Well

   Baymatov Paziljon Jamoldinovich

   СтатьяSemiconductor Quantum Structures and DevicesAmerican Journal of Physics and Applications2018Цитирований: 0

   ABIABI:AkademIndex/openalex/2018.article.000648