Работы, цитирующие эту работу

Работ: 3

Работа: On the theory of current–voltage characteristics of semiconductor diode structures with strong carrier accumulation

1. Mechanism of charge transfer in injection photodiodes based on the In-n +-CdS-n-CdS x Te1 − x -p-Zn x Cd1 − x Te-Mo structure

   Ш. А. Мирсагатов, A. Yu. Leĭderman, O. K. Ataboev

   СтатьяChalcogenide Semiconductor Thin FilmsPhysics of the Solid State2013Цитирований: 6

   ABIABI:AkademIndex/openalex/2026.other.393702

2. On the magnetosensitivity of semiconductor diode structures with strong carrier accumulation

   M. S. Gilenko, P. M. Karageorgy‐Alkalaev, A. Yu. Leĭderman

   СтатьяSemiconductor Quantum Structures and Devicesphysica status solidi (a)1981Цитирований: 3

   ABIABI:AkademIndex/openalex/2026.other.527641

3. On the Noise of Semiconductor Diode Structures with Strong Carrier Accumulation

   M. S. Gilenko, P. M. Karageorgy‐Alkalaev, A. Yu. Leĭderman

   СтатьяAdvancements in Semiconductor Devices and Circuit Designphysica status solidi (a)1982Цитирований: 0

   ABIABI:AkademIndex/openalex/1982.article.000115