Работы, цитирующие эту работу

Работ: 2

Работа: High-current-gain Ga/sub 0.51/In/sub 0.49/P/GaAs heterojunction bipolar transistor grown by gas-source molecular beam epitaxy

1. Analysis of InGaP(001) surface by the low energy ion scattering spectroscopy

   Uchkun Kutliev, М. K. Kаrimov, F.O. Kuryozov +1

   СтатьяIon-surface interactions and analysisJournal of Physics Conference Series2021Цитирований: 4

   ABIABI:AkademIndex/openalex/2026.other.290701

2. Investigation of stepped InP(001)<110> surface by the method of low energy ion scattering

   М. K. Kаrimov, Uchkun Kutliev, M. U. Otabaev +1

   СтатьяIon-surface interactions and analysisJournal of Physics Conference Series2022Цитирований: 0

   ABIABI:AkademIndex/openalex/2022.article.001794