Specific features of the epitaxial growth of narrow-gap InSb quantum dots on an InAs substrate
K. D. MoiseevIoffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg, 194021, Russian FederationYa. A. ParkhomenkoIoffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg, 194021, Russian FederationЕ. В. ГущинаIoffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg, 194021, Russian FederationA. V. AnkudinovIoffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg, 194021, Russian FederationВ. П. МихайловаIoffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg, 194021, Russian FederationН. А. БертIoffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg, 194021, Russian FederationYu. P. YakovlevIoffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg, 194021, Russian Federation
2009en
ABI
Аннотация
Arrays of coherent InSb quantum dots (QDs) have been fabricated by liquid-phase epitaxy on InAs substrates in the temperature range T = 420–450°C. The QDs with a density of (0.9−2) × 1010 cm−2 were 3 nm high and 13 nm in diameter. A bimodal QD size distribution was observed, which was accounted for by a combined growth mechanism of these nanoobjects. Structural characteristics of a separate InSb QD formed on the InAs surface were studied for the first time by atomic-force and transmission electron microscopies. Moire fringes were observed for the first time for QDs in the InSb/InAs system, with the moire period of 3.5 nm corresponding to InSb QDs without an admixture of arsenic.
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