Is it possible to carry out impact ionization in the narrow energy gap of p-p, n-n heterojunctions and increase the efficiency of thin-film solar cells?

We try to justify the idea that it is possible to implement impact ionization and generate additional electron-hole pairs in the narrow energy-gap layer by accelerating the high energy-gap photoelectrons by the field of a p-p, n-n heterojunction barrier and by increasing the efficiency of thin-film solar cells. We investigate whether impact ionization in the GaSb layer of a p-CdTe-p-GaSb heterojunction is possible and whether it is possible to increase the efficiency of a CdTe solar cell up to 50%.

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