Работы, цитирующие эту работу

Работ: 2

Работа: Interface properties for GaAs/InGaAlP heterojunctions by the capacitance-voltage profiling technique

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   ABIABI:AkademIndex/openalex/2020.article.000761

2. Some features of selection conditions and manufacturing technology for highly efficient thin-film solar cells based on Si

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   ABIABI:AkademIndex/openalex/2020.article.003435