Reactive ion etching of GaN using BCl3
Mao LinMaterials Research Laboratory and Coordinated Science Laboratory, University of Illinois at Urbana-Champaign, 104 South Goodwin Avenue, Urbana, Illinois 61801Zhaoyan FanMaterials Research Laboratory and Coordinated Science Laboratory, University of Illinois at Urbana-Champaign, 104 South Goodwin Avenue, Urbana, Illinois 61801Zhongqi MaMaterials Research Laboratory and Coordinated Science Laboratory, University of Illinois at Urbana-Champaign, 104 South Goodwin Avenue, Urbana, Illinois 61801L. H. AllenMaterials Research Laboratory and Coordinated Science Laboratory, University of Illinois at Urbana-Champaign, 104 South Goodwin Avenue, Urbana, Illinois 61801H. Morkoç̌Materials Research Laboratory and Coordinated Science Laboratory, University of Illinois at Urbana-Champaign, 104 South Goodwin Avenue, Urbana, Illinois 61801
1994en
ABI
Аннотация
Reactive ion etching with SiCl4 and BCl3 of high quality GaN films grown by plasma enhanced molecular beam epitaxy is reported. Factors such as gas chemistry, flow rate, and microwave power affecting the etching rate are discussed. The etch rate has been found to be larger with BCl3 than with SiCl4 plasma. An etch rate of 8.5 Å/s was obtained with the BCl3 plasma for a plasma power of 200 W, pressure of 10 mTorr, and flow rate of 40 sccm. Auger electron spectroscopy (AES) was used to investigate the surface of GaN films after etching. Oxygen contamination has been detected from the AES profiles of etched GaN samples.
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