Работы, цитирующие эту работу

Работ: 2

Работа: Reactive ion etching of GaN using BCl3

1. Photoluminescence of n-GaN: Influence of chemical treatment of the surface using sulfide solutions

   Yu. V. Zhilyaev, M. E. Kompan, E. V. Konenkova +2

   СтатьяGaN-based semiconductor devices and materialsTechnical Physics Letters1998Цитирований: 0

   ABIABI:AkademIndex/openalex/1998.article.000263

2. A theoretical study on the application of zinc oxide nanotube for selective detection of BF3 and BCl3

   Vanessa Valverde, Saade Abdalkareem Jasim, Ahmed Elawady +6

   СтатьяGas Sensing Nanomaterials and SensorsPhysica B Condensed Matter2023Цитирований: 0

   ABIABI:AkademIndex/openalex/2023.article.002132