Работы, цитирующие эту работу

Работ: 2

Работа: Space-charge-induced negative resistance in avalanche diodes

1. Investigation of the Influence of Technological Factors on High-Voltage p0–n0 Junctions Based on GaAs

   A. M. Sultanov, E. K. Yusupov, R. G. Rakhimov

   СтатьяPulsed Power Technology ApplicationsJournal of Nano- and Electronic Physics2024Цитирований: 2

   ABIABI:AkademIndex/openalex/2024.article.002680

2. Development of technology for creating high-voltage p0–n0 junctions based on GaAs

   A. M. Sultanov, Abdusattor Abdukarimov, M. Z. Kufian

   СтатьяSemiconductor Lasers and Optical DevicesBulletin of the Karaganda University Physics Series2023Цитирований: 1

   ABIABI:AkademIndex/openalex/2023.article.003365