Работы, цитирующие эту работу

Работ: 3

Работа: Study of defect annealing by supercurrent proton beam irradiation and of radiation defect profiles in GaAs by the positron annihilation method

1. Positron and positronium states in semiconductors irradiated by supercurrent beams of charged particles

   A. D. Pogrebnyak

   СтатьяMuon and positron interactions and applicationsphysica status solidi (a)1984Цитирований: 5

   ABIABI:AkademIndex/openalex/2026.other.520076

2. Structure modifications and mechanical properties of alloys exposed to pulsed ion beams

   A.D. Pogrebnjak, A. E. Ligachev, A. V. Nesmelov +6

   СтатьяIon-surface interactions and analysisRadiation Effects1987Цитирований: 1

   ABIABI:AkademIndex/openalex/2026.other.520059

3. Processes of annealing and defect generation in semiconductors irradiated by supercurrent electron beam

   A. D. Pogrebnyak, Yu. Yu. Kryuchkov, A. A. Verigin

   СтатьяSilicon and Solar Cell TechnologiesRadiation Effects1985Цитирований: 0

   ABIABI:AkademIndex/openalex/1985.article.000066