Статья

Effect of oxidation on charge localization and transport in a single layer of silicon nanocrystals

R. KrishnanDepartment of Electrical and Computer Engineering, University of Rochester, Rochester, New York 14627Qiwei XieProcess and Materials Characterization Laboratory, APRDL, SPS, Motorola, Arizona 85284J. KulikProcess and Materials Characterization Laboratory, APRDL, SPS, Motorola, Arizona 85284X. D. WangProcess and Materials Characterization Laboratory, APRDL, SPS, Motorola, Arizona 85284Shi-Feng LuProcess and Materials Characterization Laboratory, APRDL, SPS, Motorola, Arizona 85284Michaël MolinariDepartment of Electrical and Computer Engineering, University of Rochester, Rochester, New York 14627Yongli GaoDepartment of Physics and Astronomy, University of Rochester, Rochester, New York 14627Todd D. KraussDepartment of Chemistry, University of Rochester, Rochester, New York 14627Philippe M. FauchetDepartment of Electrical and Computer Engineering, University of Rochester, Rochester, New York 14627

2004en

ABI

Аннотация

The effect of oxidation on charge transport and retention within a sheet of silicon (Si) nanocrystals was investigated with an electrostatic force microscope. Single layers of nanocrystals with smooth and abrupt Si/SiO2 interfaces were prepared by thermal crystallization of thin amorphous Si layers, followed by an oxidation treatment for isolating the nanocrystals. Controlled amounts of charge were injected into the nanocrystals and their in-plane diffusion was monitored in real time. Rapid transport of the injected charge occurred for the nonoxidized nanocrystals. Oxidation of the nanocrystal layer resulted in suppression of lateral transport. The nanocrystals oxidized for 30 min retained the injected charge in a well-defined, localized region with retention times of the order of several days. These long-term charge retention characteristics indicate that nanocrystals prepared by this process could be attractive candidates for nonvolatile memory applications.

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Идентификаторы

DOI: 10.1063/1.1751632

Цитирования и источники

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