Работы, цитирующие эту работу

Работ: 4

Работа: Effect of oxidation on charge localization and transport in a single layer of silicon nanocrystals

1. Crystal Structure and Band Gap of Nanoscale Phases of Si Formed at Various Depths of the Near-Surface Region of SiO2

   Д. А. Ташмухамедова, M. B. Yusupjanova, G. Kh. Allayarova +1

   СтатьяSilicon Nanostructures and PhotoluminescenceTechnical Physics Letters2020Цитирований: 4

   ABIABI:AkademIndex/openalex/2020.article.000869

2. Regularities of the Formation of SiO2 Nanophases and Nanofilms on a Si Surface during $${\text{O}}_{2}^{ + }$$-Ion Implantation

   G. Kh. Allayarova

   СтатьяIon-surface interactions and analysisJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques2022Цитирований: 2

   ABIABI:AkademIndex/openalex/2022.article.001457

3. Effect of $${\text{O}}_{2}^{ + }$$ Ion Implantation on the Elemental and Chemical Composition of the Si(111) Surface

   G. Kh. Allayarova, Б. Е. Умирзаков, A. K. Tashatov

   СтатьяIon-surface interactions and analysisJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques2024Цитирований: 0

   ABIABI:AkademIndex/openalex/2024.article.007396

4. Effect of О<sub>2</sub><sup>+</sup> Ion Implantation on the Elemental and Chemical Composition of the Si(111) Surface

   G. Kh. Allayarova, Б. Е. Умирзаков, A. K. Tashatov

   СтатьяIon-surface interactions and analysisПоверхность Рентгеновские синхротронные и нейтронные исследования2024Цитирований: 0

   ABIABI:AkademIndex/openalex/2024.article.008167