Работы, цитирующие эту работу

Работ: 2

Работа: Diffusion and interactions of point defects in silicon: molecular dynamics simulations

1. Electrophysical properties of Silicon doped by Nickel impurity using Diffusion method

   Sharifa B. Utamuradova

   СтатьяSilicon and Solar Cell TechnologiesInternational Journal of Emerging Trends in Engineering Research2020Цитирований: 3

   ABIABI:AkademIndex/openalex/2026.other.514939

2. Annealing of radiation damage in Si. A molecular dynamics study

   Cristian D. Denton, V. Konoplev, A. Gras-Martí +1

   СтатьяSilicon and Solar Cell TechnologiesRadiation effects and defects in solids1997Цитирований: 0

   ABIABI:AkademIndex/openalex/1997.article.000071