Статья

Impact of Off-State Stress and Negative Bias Temperature Instability on Degradation of Nanoscale pMOSFET

Nam-Hyun LeeDepartment of Electronic and Electrical Engineering, Pohang University of Science and Technology, Pohang, South KoreaHyung-wook KimMemory Division, Samsung Electronics Company Limited, Hwaseong, South KoreaBongkoo KangDepartment of Electronic and Electrical Engineering, Pohang University of Science and Technology, Pohang, South Korea

2011en

ABI

Аннотация

This letter investigates the impact of dynamic stress on the degradation of a nanoscale p-channel metal-oxide-semiconductor field-effect transistor (pMOSFET). Experimental results indicate that the off-state stress generated donorlike interface traps N it and electron oxide traps, localized near the drain. The on-state stress produced the negative bias temperature instability which generated N it 's and positive oxide charges Q ox distributed uniformly in the channel. Although the electrons trapped by the off-state stress decreased the threshold voltage | V th |, they were detrapped readily by the subsequent on-state stress. A dynamic stress caused the nanoscale pMOSFET to build up N it and positive Q ox , which increased the | V th | significantly. These new observations indicate that the combined dynamic process can significantly influence the reliability of scaled CMOS inverter circuits.

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Идентификаторы

DOI: 10.1109/led.2011.2174026

Цитирования и источники

Цитирований: 4Использованных источников: 0

Показатели — AkademScholar