Работы, цитирующие эту работу

Работ: 4

Работа: Impact of Off-State Stress and Negative Bias Temperature Instability on Degradation of Nanoscale pMOSFET

1. Lateral Capacitance–Voltage Method of NanoMOSFET for Detecting the Hot Carrier Injection

   A. É. Atamuratov, Ahmed Yusupov, Zamira Atamuratova +2

   СтатьяSemiconductor materials and devicesApplied Sciences2020Цитирований: 3

   ABIABI:AkademIndex/openalex/2020.article.000900

2. Capacitance Method for Identifying Degradation due to Electrical Stress in MOSFETs

   Zamira Atamuratova, Ahmed Yusupov, Jean Chamberlain Chedjou +1

   СтатьяSemiconductor materials and devicese-Journal of Surface Science and Nanotechnology2022Цитирований: 0

   ABIABI:AkademIndex/openalex/2022.article.006400

3. Capacitance-Voltage Method for Detecting the local oxide trapped charge in SOI FinFET

   A.E. Abdikarimov, Mirzabahrom Foziljonov, И. Н. Каримов

   СтатьяSemiconductor materials and devices2022Цитирований: 0

   ABIABI:AkademIndex/openalex/2022.article.011220

4. Impacts of Local Oxide Trapped Charge on Electrical and Capacitance Characteristics of SOI FinFet

   A. É. Atamuratov, И. Н. Каримов, Mirzabahrom Foziljonov +3

   СтатьяSemiconductor materials and devicesEast European Journal of Physics2025Цитирований: 0

   ABIABI:AkademIndex/openalex/2025.article.009018