Study of defects in heterostructures with GaPAsN and GaPN quantum wells in the GaP matrix

Heterostructures with GaP/GaP1 − x N x and GaP/GaP1 − x − y As x N y quantum wells grown by the MOCVD method are studied by methods of capacitance-voltage profiling and capacitive and current deep level transient spectroscopy. In heterostructures with GaP/GaP1 − x N x quantum wells, intrinsic defects with deep levels of 0.17 and 0.08 eV are revealed. It is shown that a considerable decrease in the concentration of these defects occurs with the substitution of a ternary GaP1 − x N x alloy forming the region of the quantum well by a GaP1 − x − y As x N y quaternary alloy. The nature of emerging defects and mechanisms of decreasing their concentration are discussed.

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