Работы, цитирующие эту работу

Работ: 2

Работа: Study of defects in heterostructures with GaPAsN and GaPN quantum wells in the GaP matrix

1. Using of ion implantation for obtaining nanostructures with the wide band GaP based on GaP

   S. B. Donaev, V N Karimova, A T Azimov +2

   СтатьяNanowire Synthesis and ApplicationsIOP Conference Series Earth and Environmental Science2020Цитирований: 3

   ABIABI:AkademIndex/openalex/2026.other.452998

2. Effect of the Implantation of Al+ Ions on the Composition, Electronic and Crystalline Structure of the GaP(111) Surface

   S. B. Donaev, Б. Е. Умирзаков

   СтатьяSemiconductor Quantum Structures and DevicesSemiconductors2020Цитирований: 2

   ABIABI:AkademIndex/openalex/2026.other.415746