Работы, цитирующие эту работу

Работ: 2

Работа: Silicon Carbide 3C-SiC phase band structures calculation in DFT

1. Efficiency of Activated Nano-Heterojunctions on Silicon and Silicon Carbide Substrates

   M. V. Dolgopolov, Maksim Elisov, S. A. Radzhapov +2

   СтатьяSemiconductor Quantum Structures and DevicesComputational nanotechnology2023Цитирований: 0

   ABIABI:AkademIndex/openalex/2023.article.002480

2. Contacts for SiC nano-microwatt energy converters

   Albina Gurskaya, M. V. Dolgopolov, Sali A. Rajapov +1

   СтатьяAdvanced Energy Technologies and Civil Engineering InnovationsVestnik Moskovskogo Universiteta Seriya 3 Fizika Astronomiya2023Цитирований: 0

   ABIABI:AkademIndex/openalex/2023.article.003766