Статья

Metal–semiconductor junctions on p-type strained Si1−xGex layers

Omer NurDevice Physics Group, Department of Physics and Measurement Technology, Linköping University, S-581 83 Linköping, SwedenM. WillanderDevice Physics Group, Department of Physics and Measurement Technology, Linköping University, S-581 83 Linköping, SwedenRaşit TuranPhysics Department, Middle East Technical University, 06531 Ankara, TurkeyM. R. SardelaSemiconductor Physics Group, Department of Physics and Measurement Technology, Linköping University, S-581 83 Linköping, SwedenG. V. HanssonSemiconductor Physics Group, Department of Physics and Measurement Technology, Linköping University, S-581 83 Linköping, Sweden

1996en

ABI

Аннотация

The electrical properties of Schottky junctions on high-quality p-type strained Si1−xGex layers have been studied for Ge fractions 0≤x≤0.24. A multicrystal high-resolution x-ray diffractometer was used to investigate the sample’s quality and the strain state and to accurately determine the Ge fraction in the fabricated devices. Several different metals, having a wide range of barrier heights, were used to reach conclusions on the variation of barrier height with the Ge content in the grown strained Si1−xGex layers. It has been found that the Schottky barrier height decreases with increasing Ge fraction in the Si1−xGex layer for the different metals investigated. The change in the barrier height with x has been found to be directly correlated to the valence band discontinuity in the Si/Si1−xGex heterojunction.

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Идентификаторы

DOI: 10.1063/1.115720

Цитирования и источники

Цитирований: 2Использованных источников: 0

Показатели — AkademScholar

Metal–semiconductor junctions on <i>p</i>-type strained Si1−<i>x</i>Ge<i>x</i> layers

Аннотация

Идентификаторы

Цитирования и источники