Работы, цитирующие эту работу

Работ: 2

Работа: Metal–semiconductor junctions on <i>p</i>-type strained Si1−<i>x</i>Ge<i>x</i> layers

1. Effect of the Ge content on the Schottky barrier height in structures based on Si1 − x Ge x solid solution

   N. A. Matchanov

   СтатьяSemiconductor materials and interfacesTechnical Physics2008Цитирований: 0

   ABIABI:AkademIndex/openalex/2008.article.000326

2. Effect of different chemical treatments of surface on the height of Al-p-SiGe and Au-n-SiGe barriers

   I. G. Atabaev, N. A. Matchanov, M. U. Hajiev +2

   СтатьяSemiconductor materials and devicesSemiconductors2010Цитирований: 0

   ABIABI:AkademIndex/openalex/2010.article.000173