EFFECT OF ION-IMPLANTATION DAMAGE ON THE OPTICAL REFLECTION SPECTRUM OF GALLIUM ARSENIDE

Optical (3–6 eV) reflectivity spectra of Cd+-implanted layers of GaAs are examined as functions of dose in the range of 1012 to 8×1014 ions/cm2 and of annealing up to 600°C. Characteristic peaks in the crystalline spectrum decrease smoothly with dose, with some saturation observed at about 6×1013/cm2. Annealing tends to partially restore the spectra toward the crystalline form. Similarity with results for implanted silicon layers is noted. Reflectivity and observations of lattice damage by Rutherford scattering are correlated.

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