Работы, цитирующие эту работу

Работ: 1

Работа: Electron eigenvalues in quantum well of AlAs/InxGa1−xAs/AlAs heterostructures with InAs nanoinserts

1. Numerical calculation of the probability of an electronic transition in a two-barrier heterostructure by a thin nanolayer

   Paziljon Baymatov, Bakhrom Abdulazizov, Makhmudjon Tokhirjonov

   СтатьяSurface and Thin Film PhenomenaThe European Physical Journal B2024Цитирований: 0

   ABIABI:AkademIndex/openalex/2024.article.002942