High-efficiency GaSb photocells
В. П. ХвостиковIoffe Physical-Technical Institute, Russian Academy of Sciences, St. Petersburg, 194021, RussiaS. V. SorokinaIoffe Physical-Technical Institute, Russian Academy of Sciences, St. Petersburg, 194021, RussiaО. А. ХвостиковаIoffe Physical-Technical Institute, Russian Academy of Sciences, St. Petersburg, 194021, RussiaN. Kh. TimoshinaIoffe Physical-Technical Institute, Russian Academy of Sciences, St. Petersburg, 194021, RussiaН. С. ПотаповичIoffe Physical-Technical Institute, Russian Academy of Sciences, St. Petersburg, 194021, RussiaB. Ya. BerIoffe Physical-Technical Institute, Russian Academy of Sciences, St. Petersburg, 194021, RussiaD. Yu. KazantsevIoffe Physical-Technical Institute, Russian Academy of Sciences, St. Petersburg, 194021, RussiaV. M. AndreevIoffe Physical-Technical Institute, Russian Academy of Sciences, St. Petersburg, 194021, Russia
2013en
ABI
Аннотация
High-current solar cells based on gallium antimonide and intended for use in solar modules and systems with solar-spectrum splitting at large solar light concentration ratios, in thermophotovoltaic generators with a high-temperature emitter, and in laser energy converters have been designed and fabricated by the diffusion of zinc from the gas phase. The influence exerted by the thickness of the p + diffusion layer on the basic characteristics of the solar cell has been studied. The optimal doping profile and the p-n-junction depth providing a high photovoltaic conversion efficiency at photocurrent densities of up to 100 A cm−2 have been determined.
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