B. Ya. Ber

Работ: 4

Ioffe Physico-Technical Institute of Russian Academy of Sciences

1. Optical and Structural Studies of Thick AlGaN Alloy Layers and AlGaN/GaN Heterostructures on Sapphire Substrates

   W. V. Lundin, A. S. Usikov, B. V. Pushnyĭ +11

   СтатьяGaN-based semiconductor devices and materialsMaterials science forum1998Цитирований: 0

   ABIABI:AkademIndex/openalex/1998.article.000109

2. Multiwell laser heterostructures fabricated by liquid-phase epitaxy

   A. Yu. Leshko, A. V. Lyutetskiĭ, A. V. Murashova +7

   СтатьяSemiconductor Lasers and Optical DevicesTechnical Physics Letters1998Цитирований: 0

   ABIABI:AkademIndex/openalex/1998.article.000133

3. Probing of the Wave Function of Shallow Donors and Acceptors by EPR in SiC Crystals with Changed Isotopic Composition

   M. V. Muzafarova, Ivan V. Ilyin, E. N. Mokhov +7

   СтатьяSilicon Carbide Semiconductor TechnologiesMaterials science forum2005Цитирований: 0

   ABIABI:AkademIndex/openalex/2005.article.000301

4. Peculiarities of Neutron-Transmutation Phosphorous Doping of SiC Enriched with <sup>30</sup>Si Isotope: Electron Paramagnetic Resonance Study

   Ivan V. Ilyin, M. V. Muzafarova, P. G. Baranov +6

   СтатьяSilicon Carbide Semiconductor TechnologiesMaterials science forum2007Цитирований: 0

   ABIABI:AkademIndex/openalex/2007.article.000209