Near ultraviolet luminescence of Be doped GaN grown by reactive molecular beam epitaxy using ammonia

Be doped GaN films grown by reactive molecular beam epitaxy (MBE) are investigated. The room temperature photoluminescence spectrum of the films that were studied shows features in the 390–420 nm range, similar to those observed in Mg doped GaN films, and indicates that Be can form acceptor states about 250 meV above the valence band of GaN. This is in contrast to previous works on GaN:Be films where the only luminescence feature seen was a broad peak centered at 2.16 eV (560 nm). Hot probe measurement indicates p-type conduction for GaN:Be doped films without any postgrowth annealing. Current–voltage measurements of fabricated mesas of MBE grown layers, consisting of a GaN:Be doped film grown over a Si doped GaN layer, show p–n diodelike rectification. A weak electroluminescence at 380–390 nm is observed when the device is driven with a pulsed current of 600 mA.

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